1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate VDS 1200 V IDS 450 A System Benef

文件：892.85 Kbytes 页数：9 Pages

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1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module

文件：893.57 Kbytes 页数：9 Pages

CREE

科锐

XM3 Half-Bridge Power Module Family

High Temperature (175 °C) OperationLow Inductance (6.7 nH) DesignUtilizes Latest 3rd Generation Silicon Carbide MOSFETSIntegrated Temperature Sensor and Kelvin-Drain ConnectionSilicon Nitride Ceramic Substrate and Copper Baseplate • High Temperature (175 °C) Operation\n• Low Inductance (6.7 nH) Design\n• Utilizes Latest 3rd Generation Silicon Carbide MOSFETS\n• Integrated Temperature Sensor and Kelvin-Drain Connection\n• Silicon Nitride Ceramic Substrate and Copper Baseplate;

Wolfspeed(CREE)

Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module

Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate VDS 1200 V IDS 450 A System Benef

文件：1.08291 Mbytes 页数：11 Pages

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