High-Current, High-Beta N-P-N Transistor Arrays

High-Current High-Beta N-P-N Transistor Arrays For Industrial, Commercial, and Military Applications Four ISOlated Discrete Sealed-Junction High-Current N-P-N Transistors Applications: ■ High-Current LED Driver ■ Relay and Solenoid Driver ■ Lamp Driver

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GESS

High-Current, High-Beta N-P-N Transistor Arrays

GESS

訝됧?LED 雍멨눣?㎩댍IC

文件：105.04 Kbytes 页数：2 Pages

BOWIN

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. ■ 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：509.6 Kbytes 页数：7 Pages

CET

华瑞

Warp Enterprise??Verilog CPLD Software

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CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司