High Frequency NPN Transistor Array

Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the t

文件：60.37 Kbytes 页数：7 Pages

Intersil

丝印：CA3127；Package：16LdSOIC；High Frequency NPN Transistor Array

High Frequency NPN Transistor Array The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is p

文件：455.69 Kbytes 页数：9 Pages

RENESAS

瑞萨

High Frequency NPN Transistor Array

文件：225.4 Kbytes 页数：9 Pages

Intersil

丝印：CA3127MZ；Package：16LdSOIC；High Frequency NPN Transistor Array

High Frequency NPN Transistor Array The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is p

文件：455.69 Kbytes 页数：9 Pages

RENESAS

瑞萨

High Frequency NPN Transistor Array

Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the t

文件：60.37 Kbytes 页数：7 Pages

Intersil

High Frequency NPN Transistor Array

文件：225.4 Kbytes 页数：9 Pages

Intersil

High Frequency NPN Transistor Array

High Frequency NPN Transistor Array\n\nThe CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. • Gain Bandwidth Product (fT) . . . . . . . . . . . . . . . . . 1GHz\n• Power Gain . . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz\n• Noise Figure. . . . . . . . . . . . . . . . .  3.5dB (Typ) at 100MHz\n• Five Independent Transistors on a Common Substrate\n• Pb-Free Plus Anneal Available (;

Renesas

瑞萨

Package：16-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS 5NPN 15V 1.15GHZ 16SOIC

Renesas Electronics America Inc