High Voltage Planar MOSFET

CHAAOSEMI

查奥微

N-Channel MOSFET 500V, 9A, 0.85廓

文件：415.32 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel MOSFET 500V, 9A, 0.85廓

文件：415.32 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：323.48 Kbytes 页数：2 Pages

ISC

无锡固电