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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 55V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：505.64 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 55V, 75A, RDS(ON) = 13mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：508.82 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 55V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：505.64 Kbytes 页数：5 Pages

CET

华瑞