BZT52-C4V3-Q

Marking：C7；Package：SOD123；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123smallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤590mW •Twotoleranceseries:±2andapproximately±5 •Wideworkingvoltagerange:nominal2.4Vto7

BZX585-B4V3

Marking：C7；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:≤40W •Totalpowerdissipation:≤300mW •Wideworkingvoltagerange:no

BZX585-B4V3

Marking：C7；Package：SC-79；Voltage regulator diodes

Featuresandbenefits Non-repetitivepeakreversepower dissipation:40W Totalpowerdissipation:300mW AEC-Q101qualified Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) Twotoleranceseries:2and5 Lowdifferentialresistance

BZX884-B30

Marking：C7；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:Ptot≤250mW •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotolerance

MM5Z4V3T5G

Marking：C7；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:±2 •Wide

NC7WZ16FHX

Marking：C7；Package：MicroPak2；TinyLogic UHS Dual Buffer

Description TheNC7WZ16isadualbufferfromonsemi’sUltra−HighSpeed SeriesofTinyLogic.ThedeviceisfabricatedwithadvancedCMOS technologytoachieveultra−highspeedwithhighoutputdrivewhile maintaininglowstaticpowerdissipationoveraverybroadVCC operatingrange.Thedevi

NC7WZ16L6X

Marking：C7；Package：MicroPak；TinyLogic UHS Dual Buffer

Description TheNC7WZ16isadualbufferfromonsemi’sUltra−HighSpeed SeriesofTinyLogic.ThedeviceisfabricatedwithadvancedCMOS technologytoachieveultra−highspeedwithhighoutputdrivewhile maintaininglowstaticpowerdissipationoveraverybroadVCC operatingrange.Thedevi

PBSS302ND

Marking：C7；Package：SC-74；40 V, 4 A NPN low VCEsat (BISS) transistor

1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc

PESD5V0U1UA

Marking：C7；Package：SOD323；Ultra low capacitance unidirectional ESD protection diodes

1.1Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications Table1.P

PESD5V0U1UA

Marking：C7；Package：SOD323；Ultra low capacitance unidirectional ESD protection diodes

1.1Generaldescription UltralowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications Table1.P