6th Generation 1700 V, 25 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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1700 V Silicon Carbide Schottky Diodes

1700 V, 25 A, TO-247-2 package, Industrial qualified, Discrete SiC Schottky Diode • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient\n• Zero Reverse Recovery Current / Forward Recovery Voltage\n• Temperature-Independent Switching Behavior\n• Low Profile Package with Low Inductance;

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