650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi • Lowest forward voltage (Vf) drop over temperature in the industry\n• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n• Robust MPS technology with high surge capability\n• High reverse-voltage blocking capability\n• Direct drop-in replacement for current silicon diodes and o;

Wolfspeed(CREE)

6th Generation 650 V, 6 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：670.72 Kbytes 页数：7 Pages

WOLFSPEED

Package：4-PowerVQFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：6A 650V SIC SCHOTTKY QFN

WOLFSPEED

6A 650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：903.45 Kbytes 页数：10 Pages

SMCDIODE

桑德斯微电子

6A 650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：903.45 Kbytes 页数：10 Pages

SMCDIODE

桑德斯微电子

6A 650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：903.45 Kbytes 页数：10 Pages

SMCDIODE

桑德斯微电子