6th Generation 650 V, 4 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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650 V Discrete Silicon Carbide Schottky Diodes

650 V, 4 A, TO-220-2 package, Industrial qualified, Discrete SiC Schottky Diode • Lowest forward voltage (Vf) drop over temperature in the industry\n• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n• Robust MPS technology with high surge capability\n• High reverse-voltage blocking capability\n• Direct drop-in replacement for current silicon diodes and o;

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Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 4A TO-220-2

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Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

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