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NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

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NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

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