首页 >C6072>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,54A,RDS(ON)=9mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,12.5A,RDS(ON)=10mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,45A,RDS(ON)=8.5mW@VGS=10V. RDS(ON)=12mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
EDAP60xx-Series ProductDescription PairofL-ShapedMountingAnglesforE-series. | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
2URackmountNetworkAppliancewith4thGenerationIntel®Xeon®ScalableProcessorforNFV Features Upto52coresforNFVneedswithsingle4thGenerationIntel®Xeon® scalableprocessors Upto16DDR5RDIMMmemorytoboostcomputingcapability 8xNMCwithPCIeGen5fornetworking(CompatiblewithGen4&Gen3) Highavailabilitysystemwithredundantsolutions Managing | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH |
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