RF Power GaN Transistor

文件：379.6 Kbytes 页数：9 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems

文件：805.06 Kbytes 页数：23 Pages

恩XP

Commercial Grade ( Mid Voltage (100 to 630V) )

Features • Voltage rating of 100V to 630V with capacitance range up to 15μF. • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • Low residual inductance assures superior frequency characteristics. • Excellent

文件：138.71 Kbytes 页数：1 Pages

TDK

东电化

Multilayer Ceramic Chip Capacitors

文件：236.18 Kbytes 页数：3 Pages

TDK

东电化

积层贴片陶瓷片式电容器

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东电化

贴片电容(MLCC)

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东电化

Package：2220（5750 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 15UF 100V X7S 2220

TDK

东电化

Package：2220（5750 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 15UF 100V X7S 2220

TDK

东电化