4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：757.9 Kbytes 页数：8 Pages

WOLFSPEED

1200 V Discrete Silicon Carbide Schottky Diodes

Wolfspeed(CREE)

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：30A 1200V SIC SCHOTTKY DIODE

WOLFSPEED

1200V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.39639 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device All SMC parts are traceable

文件：1.59842 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

1200V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device All SMC parts are traceable

文件：1.59842 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子