Pin photodiode amplifier

Wide bandwidth amplifier (1.5 GHz, 20 dB) C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain. C4890 can also be combined

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

PIN photodiode amplifier

Wide bandwidth amplifier (1.5 GHz, 20 dB)C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.\nC4890 can also be combined with other • Wide bandwidth, high gain, flat gain spectrum\n• Flat, low group delay characteristics and low noise\n• Input/output impedance: 50 Ω\n• Small size, light weight, low price\n• Single power supply operation (+12 V)Applications\n• High frequency amplifier for measurement\n• PIN photodiode evaluation ;

Hamamatsu

滨松光子

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Very low equivalent on-resistance; RCE(sat) 175mΩ at 1A

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ZETEX

Mini-Triggered Spark Gaps and Transformers

Mini-Triggered Spark Gaps and Transformers Features •High reliability •Extremely low jitter •Environmentally durable •Small size •Matching trigger transformers Applications Precision timing and firing for in-flight functions such as rocket motor ignition, warhead detona

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PERKINELMER

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .

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NTE