| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：C3D04060；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Be 文件：1.10793 Mbytes 页数：6 Pages | WOLFSPEED | WOLFSPEED | ||
丝印：C3D04060；Package：TO-220-F2；Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak) Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF • Fully Isolated Case Benefits • Replace Bipo 文件：885.46 Kbytes 页数：6 Pages | WOLFSPEED | WOLFSPEED | ||
丝印：C3D04065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Be 文件：1.11127 Mbytes 页数：6 Pages | WOLFSPEED | WOLFSPEED | ||
Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET 文件：291.41 Kbytes 页数：2 Pages | Cree 科锐 | Cree | ||
3rd Generation 600 V, 4 A Silicon Carbide Schottky Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m 文件：1.43272 Mbytes 页数：8 Pages | WOLFSPEED | WOLFSPEED | ||
Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET 文件：291.41 Kbytes 页数：2 Pages | Cree 科锐 | Cree | ||
Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET 文件：291.41 Kbytes 页数：2 Pages | Cree 科锐 | Cree | ||
Silicon Carbide Schottky Diode Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET 文件：595.63 Kbytes 页数：6 Pages | Cree 科锐 | Cree | ||
Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET 文件：291.41 Kbytes 页数：2 Pages | Cree 科锐 | Cree | ||
3rd Generation 650 V, 4 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m 文件：1.67897 Mbytes 页数：9 Pages | WOLFSPEED | WOLFSPEED |
产品属性
- 产品编号：
C3D04065E
- 制造商：
Wolfspeed, Inc.
- 类别：
分立半导体产品 > 二极管 - 整流器 - 单
- 系列：
Z-Rec®
- 包装：
管件
- 二极管类型：
碳化硅肖特基
- 电流 - 平均整流 (Io)：
13.5A
- 速度：
无恢复时间 > 500mA（Io）
- 不同 Vr、F 时电容：
251pF @ 0V，1MHz
- 安装类型：
表面贴装型
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
- 供应商器件封装：
TO-252-2
- 工作温度 - 结：
-55°C ~ 175°C
- 描述：
DIODE SCHOTTKY 650V 4A TO252-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE全系列可接受订货 |
23+ |
NA |
9808 |
CREE进口代理原装优势供应全系列可订货QQ1304306553 |
询价 | ||
Wolfspeed |
24+ |
NA |
3711 |
进口原装正品优势供应 |
询价 | ||
CREE |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
CREE/科锐 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
WOLFSPEED |
25+ |
TO-252-2 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
CREE |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Cree |
22+ |
NA |
2780 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
CREE |
19+ |
TO-252 |
3600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Wolfspeed |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
CREE |
24+ |
NA/ |
200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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