丝印：C3BJ；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BJ；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BJ；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BJ；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 页数：20 Pages

TI

德州仪器

丝印：C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 页数：20 Pages

TI

德州仪器

丝印：C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 页数：20 Pages

TI

德州仪器

KEMET C3B 系列 30μF 聚丙烯电容器 (PP) C3B2AC55300B20K, ±10%, 250V ac, 电缆安装, 40mm直径

Kemet

基美

薄膜电容

Kemet

基美

薄膜电容

Kemet

基美