Silicon Controlled Rectifier

文件：184.94 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：56.86 Kbytes 页数：3 Pages

Panasonic

松下

LOW POWER DUAL COMPARATORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：65.94 Kbytes 页数：12 Pages

NEC

瑞萨

丝印：C393C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

文件：1.16134 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C393C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

文件：1.16134 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C393C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

文件：1.16134 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C393C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

文件：1.16134 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C393C；Package：SOIC(D)；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

Very Low Power . . . 110 μW Typ at 5 V Fast Response Time . . . tPLH = 2.5 μs Typ With 5-mV Overdrive Single Supply Operation: TLC393C . . . 3 V to 16 V TLC393I . . . 3 V to 16 V TLC393Q . . . 4 V to 16 V TLC393M . . . 4 V to 16 V TLC193M . . . 4 V to 16 V On-Chip ESD Protection descri

文件：1.16134 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C393Q1；Package：SOIC；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

1FEATURES 2• Qualified for Automotive Applications • AEC Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B • ESD Protection Exceeds

文件：592.87 Kbytes 页数：23 Pages

TI

德州仪器

丝印：C393Q1；Package：SOIC；DUAL MICROPOWER LinCMOS™ VOLTAGE COMPARATOR

1FEATURES 2• Qualified for Automotive Applications • AEC Q100 Qualified with the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level H2 – Device CDM ESD Classification Level C4B • ESD Protection Exceeds

文件：592.87 Kbytes 页数：23 Pages

TI

德州仪器