GLUR3910M

SURFCOILSMTINDUCTORS

GLXR3910

SURFCOILSMTINDUCTORS

HTE3910MOHM

HighVoltage/ThickFilmResistors

IIRFR3910

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IRD3910

20AND30AMPFASTRECOVERYRECTIFIERDIODES

Description ThisrangeoffastrecoverydiodesisdesignedforapplicationsinDCpowersupplies,inverters,choppers,ultrasonicsystemandforuseasafree-wheelingdiode. Features ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■Stu

IRD3910

RectifiersFastRecovery

IRFR3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFR3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRFR3910

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IRFR3910

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)