Phase Control SCR 590 Amperes Avg 500-1200 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：191.8 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：817.72 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：209.62 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：209.62 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：209.62 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：209.62 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：209.62 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

文件：209.62 Kbytes 页数：4 Pages

POWEREX

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：56.86 Kbytes 页数：3 Pages

Panasonic

松下

LOW POWER DUAL COMPARATORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：65.94 Kbytes 页数：12 Pages

NEC

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