丝印：C30；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C30；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01% Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C30；Package：SOT323-5L；Precision micropower shunt voltage reference

Features • Fixed 2.048 V, 2.5 V, 3.0 V, 4.096 V and 5.0 V output voltages • Ultra low operating current: 10 μA at 25 °C • High precision @ 25 °C: +/- 0.1% (LM4040A), +/- 0.2% (LM4040B), +/- 0.5 % (LM4040C), +/- 1% (LM4040D) • Very low LF noise: typ.10 μ Vp-p • Stable when used

文件：1.10753 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：C30；Package：SOT23-3L；Precision micropower shunt voltage reference

Features • Fixed 2.048 V, 2.5 V, 3.0 V, 4.096 V and 5.0 V output voltages • Ultra low operating current: 10 μA at 25 °C • High precision @ 25 °C: +/- 0.1% (LM4040A), +/- 0.2% (LM4040B), +/- 0.5 % (LM4040C), +/- 1% (LM4040D) • Very low LF noise: typ.10 μ Vp-p • Stable when used

文件：1.10753 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：C30；Package：SOT-563；SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

文件：117.68 Kbytes 页数：2 Pages

CENTRAL

丝印：C30；Package：SOT-563；SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

文件：233.61 Kbytes 页数：2 Pages

CENTRAL

丝印：C30；Package：SOT-563；SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

文件：523.87 Kbytes 页数：2 Pages

CENTRAL

丝印：C30；Package：SOT-563；SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：730.64 Kbytes 页数：4 Pages

CENTRAL

丝印：C3074；Package：SC-73；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：C3076；Package：SC-70；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝