C3M0160120J

Marking：C3M0160120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Lowimpedancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr

C3M0280090D

Marking：C3M0280090；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Incre

C3M0350120D

Marking：C3M0350120D；Package：TO-247-3；C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc

C3M0350120J

Marking：C3M0350120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Lowimpedancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr

DMC3021LSDQ-13

Marking：C3021LD；Package：SO-8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ComplementaryPairMOSFET TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCapa

DMC3026LSD-13

Marking：C3026LD；Package：SO-8；DMC3026LSD

Features •LowInputCapacitance •LowOn-Resistance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability Applications •DC-DCConverters •PowerManage

DTC323TS

Marking：C323TS；Package：SPT/SC-72；Digital transistors (built-in resistor)

DTC343TS

Marking：C343TS；Package：SPT/SC-72；Digital transistors (built-in resistor)

ESD36V23T-2C

Marking：C36；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 320~450WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwobidirectionalI/Olines Workingvoltage:3.3~36V Lowclampingvoltage Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V~15V IEC61000-4-2(ESD)±25kV(air),±20kV(contact):18V~36V IEC61000-4-4(E

ESD36V23TS-2C

Marking：C36；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 320~450WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwobidirectionalI/Olines LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30k