C3D20065D

Marking：C3D20065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •650-VoltSchottkyRectifier •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •High-FrequencyOperation •Temperature-IndependentSwitchingBehavior •ExtremelyFastSwitching •PositiveTemperatureCoefficientonVF Benefits •ReplaceBipolarwithUnipolarRecti

C3D30065D

Marking：C3D30065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •650VoltSchottkyRectifier •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •High-FrequencyOperation •Temperature-IndependentSwitchingBehavior •ExtremelyFastSwitching •PositiveTemperatureCoefficientonVF Benefits •ReplaceBipolarwithUnipolarRecti

C3M0015065D

Marking：C3M0015065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen

C3M0015065K

Marking：C3M0015065K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •

C3M0016120D

Marking：C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H

C3M0016120K

Marking：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery

C3M0021120D

Marking：C3M0021120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Reduceswitchinglossesandminimizegateringing •H

C3M0021120K

Marking：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery

C3M0025065D

Marking：C3M0025065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen

C3M0025065J1

Marking：C3M0025065J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •R