20A High Power Trench Schottky Barrier Rectifier

文件：477.59 Kbytes 页数：3 Pages

CITC

竹懋科技

20A High Power Trench Schottky Barrier Rectifier

文件：477.69 Kbytes 页数：3 Pages

CITC

竹懋科技

Stable leakage current over reverse voltage

文件：153.8 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Field effect rectifier

Features  ST proprietary process  Stable leakage current over reverse voltage  Low forward voltage drop  High frequency operation Description This single rectifier is based on a proprietary technology, enabling to achieve the best in class VF/IR trade-off for a given silicon surface.

文件：330.29 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体