isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

文件：219.34 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：127.93 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

文件：10.84 Kbytes 页数：11 Pages

PerkinElmer

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

文件：10.84 Kbytes 页数：11 Pages

PerkinElmer

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

文件：10.84 Kbytes 页数：11 Pages

PerkinElmer

Channel Photomultipliers

Features • Ultra high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3pA @ 106 gain • Very low equivalent noise input (down to 10 -17 W) • Very high stability in dark current (no ”bursts”) • High gain exceeding 108 • Very high dynamic range • Compact dimensions • W

文件：10.84 Kbytes 页数：11 Pages

PerkinElmer

丝印：C1971；Package：T-30E；NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：127.93 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

NPN EPITAXAIL PLANAR TYPE TRANSISTOR FOR RF POWER AMPLIFIERS

DESCRIPTION\n2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.FEATURES\n● High power gain: Gpe ≥ 10dB,\n   @VCC = 13.5V, Po = 6W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability ● High power gain: Gpe ≥ 10dB,\n   @VCC = 13.5V, Po = 6W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-220 package similar is combinient for mounting.\n● Ability to withstand more than 20:1 load\n   VSWR when operated at VCC =;

NJS