C1942

Channel Photomultipliers

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

C1942P

Channel Photomultipliers

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

C1943

Channel Photomultipliers

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

C1943P

Channel Photomultipliers

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

C1944

Channel Photomultipliers

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

C1944P

Channel Photomultipliers

Features •Ultrahighanodesensitivityupto107A/W •Extremelylowdarkcurrent,typically3pA@106gain •Verylowequivalentnoiseinput(downto10-17W) •Veryhighstabilityindarkcurrent(no”bursts”) •Highgainexceeding108 •Veryhighdynamicrange •Compactdimensions •W

C1945

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications.

C1946A

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946AisasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersinVHFbandmobileradioapplications.

C1947

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947isasiliconNPNepitaxialplanartypetransistordesignedforindustrialuseRFpoweramplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10.7dB @VCC=13.5V,PO=3.5W,f=175MHz ●TO-39metalseeledpackageforhighreliability. ●Em

C194KFKT

Meet ROHS, Green Product.