ENA1925A

RFTransistor12V,30mA,fT=8GHz,NPNSingleMCPH3

RFTransistor 12V,30mA,fT=8GHz,NPNSingleMCPH3 Features •Low-noiseuse:NF=1.2dBtyp(f=1GHz) •Highcut-offfrequency:fT=8GHztyp(VCE=5V) •Highgain:|S21e|2=12dBtyp(f=1GHz) •Halogenfreecompliance

ENA1925A

RFTransistor12V,30mA,fT=8GHz,NPNSingleMCPH3

RFTransistor 12V,30mA,fT=8GHz,NPNSingleMCPH3 Features •Low-noiseuse:NF=1.2dBtyp(f=1GHz) •Highcut-offfrequency:fT=8GHztyp(VCE=5V) •Highgain:|S21e|2=12dBtyp(f=1GHz) •Halogenfreecompliance

LV-1925-H

ReedSwitchforLineVoltageSwitching

LV-1925-L

ReedSwitchforLineVoltageSwitching

LV-1925-M

ReedSwitchforLineVoltageSwitching

MAX1925

Switch-Mode1-CellLiChargers

MAX1925ETC

Switch-Mode1-CellLiChargers

MP1925

100V,4A,High-Frequency,Half-BridgeGateDriver

DESCRIPTION TheMP1925isahigh-frequency,half-bridge, N-channelpowerMOSFETdriver.Itslow-side andhigh-sidedriverchannelsarecontrolled independentlyandmatchedwithlessthan5ns oftimedelay.Under-voltagelockout(UVLO)on boththehigh-sideandlow-sidesuppliesforces theo

MP1925HR

100V,4A,High-Frequency,Half-BridgeGateDriver

DESCRIPTION TheMP1925isahigh-frequency,half-bridge, N-channelpowerMOSFETdriver.Itslow-side andhigh-sidedriverchannelsarecontrolled independentlyandmatchedwithlessthan5ns oftimedelay.Under-voltagelockout(UVLO)on boththehigh-sideandlow-sidesuppliesforces theo

MPQ1925

100V,4A,High-Frequency,Half-BridgeGateDriver

DESCRIPTION TheMPQ1925isahigh-frequency,N-channel MOSFET,half-bridgegatedriver.Thedevice’s low-sideMOSFET(LS-FET)andhigh-side MOSFET(HS-FET)driverchannelsare independentlycontrolled,andarematchedwith lessthan5nsintimedelay.Inthecaseofan insufficientsupply,