The Cll Silicon Controlled Rectifier

文件：137.48 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：C11F；Package：SOT-23(DBV)；SN74LVC1G11 Single 3-Input Positive-AND Gate

1 Features • Latch-up performance exceeds 100mA per JESD 78, class II • ESD protection exceeds JESD 22 – ±2000V human-body model (A114-A) – ±1000V charged-device model (C101) • Available in the Texas Instruments NanoFree™ package • Supports 5V VCC operation • Inputs accept voltages to 5.5

文件：2.15226 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C11F；Package：SOT-23(DBV)；SN74LVC1G11 Single 3-Input Positive-AND Gate

1 Features • Latch-up performance exceeds 100mA per JESD 78, class II • ESD protection exceeds JESD 22 – ±2000V human-body model (A114-A) – ±1000V charged-device model (C101) • Available in the Texas Instruments NanoFree™ package • Supports 5V VCC operation • Inputs accept voltages to 5.5

文件：2.15226 Mbytes 页数：35 Pages

TI

德州仪器

丝印：C11F；Package：SOT-23(DBV)；SN74LVC1G11 Single 3-Input Positive-AND Gate

1 Features • Latch-up performance exceeds 100mA per JESD 78, class II • ESD protection exceeds JESD 22 – ±2000V human-body model (A114-A) – ±1000V charged-device model (C101) • Available in the Texas Instruments NanoFree™ package • Supports 5V VCC operation • Inputs accept voltages to 5.5

文件：2.15226 Mbytes 页数：35 Pages

TI

德州仪器