丝印：C011；Package：DFN1010B-6；45 V, 100 mA PNP/PNP matched double transistors

Features and benefits • Reduces component count • Reduces pick and place costs • Low package height of 0.37 mm • Current gain matching • Base-emitter voltage matching • Application-optimized pinout • AEC-Q101 qualified

文件：228.39 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • Power Amplifiers • Audio-Frequency Amplifiers Features (1) High collector voltage : VCEO = 230 V (min) (2) Small collector output capacitance : Cob = 20 pF (typ.) (3) High transition frequency : fT = 100 MHz (typ.) (4) Complementary to TTA006B

文件：272.99 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：C011AJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

丝印：C011CJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

旋转位置传感器

Honeywell

霍尼韦尔

FAST RECOVERY DIODE

FUJI

富士通