BZX84B10-TP

Silicon 350 mWatt Zener Diodes

AD-BZX84B10

Plastic-EncapsulatedDiode

FEATURES Planardieconstruction 300mWPowerdissipation Zenervoltagesfrom2.4V-39V Ultra-smallsurfacemountpackagePowerdissipation AEC-Q101qualified

BZX84B10

SurfaceMountZenerDiode

FEATURES ●PlanarDieConstruction. ●350mwPowerDissipation. ●ZenerVoltagesFrom2.4V-51V ●IdeallySuitedForAutomatedAssemblyPrcesses. APPLICATIONS ●350MwSurfacemountzenerdiode

BZX84B10

350mWSURFACEMOUNTPRECISIONZENERDIODE

Features •±2ToleranceonVZ •350mWPowerDissipation •ZenerVoltagesfrom2.7V-39V •IdeallySuitedforAutomatedAssemblyProcesses •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Standards

BZX84B10

SMALLSIGNALZENERDIODES225mWATTS

FEATURES ●Non-wirebondingstructureimproves ●Highdemandvoltagerange(3.6V-36V) ●ThisisaPb-Freedevice

BZX84B10

350mWSURFACEMOUNTPRECISIONZENERDIODE

BZX84B10

SurfacemountSiliconPlanarZenerDiodes

BZX84B10

SURFACEMOUNTSILICONZENERDIODES

FEATURES •PlanarDieconstruction •410mWPowerDissipation •ZenerVoltagesfrom2.4~75V •IdeallySuitedforAutomatedAssemblyProcesses •IncompliancewithEURoHS2002/95/ECdirectives

BZX84B10

Silicon350mWattZenerDiodes

BZX84B10

SILICONPLANARZENERDIODES

ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables,andhighdensityPCboards.