BZT-RLZ3V3B

SILICON EPITAXIAL PLANAR ZENER DIODES

BZX3V3

SILICONEPITAXIALPLANARTYPE

[DAIWA] Features: Verysharpreversecharacteristic Lowreversecurrentlevel Veryhighstability Lownoise Availablewithtightertolerances

BZX3V3

1.3WEPITAXIALZENERDIODE

FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •Hightemperaturesoldering:260°C/10secondsatterminals •GlasspackagehasUnderwritersLaboratoryFlammabilityClassification •IncompliancewithEURoHS2002/95/ECdirectives

C3V3

SOT23SILICONPLANARVOLTAGEREGULATORDIODES

C3V3PH

500mWZenerDiode

Features ◇Fastswitchingspeed ◇Generalpurposerectification ◇Siliconepitaxialplanarconstruction

CESD3V3AP

Uni-directionESDProtectionDiode

CESD3V3AP

2-LineUni-directionalTVSDiode

Features| #210Wpeakpulsepower(8/20ps) ®Ultralowleakage:nAlevel #Operatingvoltage:3.3V Lowclampingvoltage #Complieswithfollowingstandards: IEC610004-2(ESD)immunitytest Airdischarge:+30KkV Contactdischarge:+30kV ~IEC61000-4-4(EFT)40A(5/50ns) ~IEC61000-

CFTVS3V3B

SURFACEMOUNTSILICONBI-DIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

CMATVS3V3

SURFACEMOUNTSILICONTRANSIENTVOLTAGESUPPRESSOR

CMATVS3V3

SURFACEMOUNTSILICONTRANSIENTVOLTAGESUPPRESSORS