| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BYV10 | Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI | |
Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI | ||
Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI | ||
Schottky Barrier Diodes Schottky Barrier Diodes 文件:39.23 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI | ||
Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI | ||
Schottky Barrier Diodes Schottky Barrier Diodes 文件:39.23 Kbytes 页数:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. 文件:72.93 Kbytes 页数:4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI | ||
Schottky barrier diodes DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • 文件:20.18 Kbytes 页数:4 Pages | PHI PHI | PHI |
技术参数
- Peak Reverse Repetitive Voltage:
20V
- Peak Reverse Current:
1000uA
- Peak Forward Voltage:
0.85@3AV
- Operating Junction Temperature:
125°C
- Minimum Operating Temperature:
-65°C
- Maximum Operating Temperature:
125°C
- Maximum Continuous Forward Current:
1A
- Configuration:
Single
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
DO-41 |
3200 |
原装长期供货! |
询价 | |||
ST |
24+ |
DIP |
30500 |
原装现货假一罚十 |
询价 | ||
ST |
05+ |
原厂原装 |
21051 |
只做全新原装真实现货供应 |
询价 | ||
PHI |
24+/25+ |
250 |
原装正品现货库存价优 |
询价 | |||
ST |
24+ |
SOT-223 |
25200 |
新进库存/原装 |
询价 | ||
恩XP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
ST |
24+ |
DO-41 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ST |
23+ |
DO-41 |
14500 |
全新原装深圳现货库存,特价· |
询价 | ||
ST |
24+ |
SOT-223 |
5000 |
只做原装公司现货 |
询价 | ||
MAXIM |
23+ |
NA |
3580 |
全新原装假一赔十 |
询价 |
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