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BYV10

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

BYV1020

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

BYV10-20

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

BYV10-20

Schottky Barrier Diodes

Schottky Barrier Diodes

文件:39.23 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BYV1030

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

BYV10-30

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

BYV10-30

Schottky Barrier Diodes

Schottky Barrier Diodes

文件:39.23 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BYV1040

SMALL SIGNAL SCHOTTKY DIODES

DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

文件:72.93 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

BYV1040

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

BYV10-40

Schottky barrier diodes

DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™ technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected •

文件:20.18 Kbytes 页数:4 Pages

PHI

PHI

PHI

技术参数

  • Peak Reverse Repetitive Voltage:

    20V

  • Peak Reverse Current:

    1000uA

  • Peak Forward Voltage:

    0.85@3AV

  • Operating Junction Temperature:

    125°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Operating Temperature:

    125°C

  • Maximum Continuous Forward Current:

    1A

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
ST
DO-41
3200
原装长期供货!
询价
ST
24+
DIP
30500
原装现货假一罚十
询价
ST
05+
原厂原装
21051
只做全新原装真实现货供应
询价
PHI
24+/25+
250
原装正品现货库存价优
询价
ST
24+
SOT-223
25200
新进库存/原装
询价
恩XP
16+
NA
8800
诚信经营
询价
ST
24+
DO-41
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
23+
DO-41
14500
全新原装深圳现货库存,特价·
询价
ST
24+
SOT-223
5000
只做原装公司现货
询价
MAXIM
23+
NA
3580
全新原装假一赔十
询价
更多BYV10供应商 更新时间2026-1-19 10:21:00