HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42G and STBV4

文件：133.7 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：BV42D；Package：TO-92；High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：121.24 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N/A

JST

JST集团

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