| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HighIsolationMiniature,1WSIPDC/DCConverters HighIsolationMiniature,1WSIPDC/DCConverters KeyFeatures: •1WOutputPower •MiniatureSIPCase •3,000VDCIsolation •CompliestoRFIStandards •>2MHourMTBF •20StandardModels •IndustryStandardPin-Out | MPD MPD (Memory Protection Devices) | MPD | ||
Small4-PinThru-holeCommonModeChoke | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
PCMountSinglePrimary | TRIAD TRIAD MAGNETICS | TRIAD | ||
NPNEpitaxialPlanarSiliconCompositeTransistorSwitchingApplications(withBiasResistance) SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC132isformedwithtwochips,beingequivalenttothe2SC40 | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
300WATT | POWER-ONE Power-One | POWER-ONE | ||
16Mbit(2Mbyte),32Mbit(4Mbyte),64Mbit(8Mbyte)3.0VSPIFlashMemory | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
LoadSwitchingApplications LoadSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
PCBoardFuses-SubMiniaturewithLeadsGFA,GLNandGLXSeries | COOPER 科普斯株洲市科普斯科技有限公司 | COOPER | ||
QUADRUPLEPOSITIVE-NANDGATESWITHSCHMITT-TRIGGERINPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Quad2-InputNANDGatewithSchmitt-TriggerInputsHigh?뭁erformanceSilicon?묰ateCMOS TheMC74HC132AisidenticalinpinouttotheLS132.Thedevice inputsarecompatiblewithstandardCMOSoutputs;withpull−up resistors,theyarecompatiblewithLSTTLoutputs. TheHC132Acanbeusedtoenhancenoiseimmunityortosquareup slowlychangingwaveforms. Features •OutputDri | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Quad2-InputNANDGatewithSchmitt-TriggerInputsHigh?뭁erformanceSilicon?묰ateCMOS TheMC74HC132AisidenticalinpinouttotheLS132.Thedevice inputsarecompatiblewithstandardCMOSoutputs;withpull−up resistors,theyarecompatiblewithLSTTLoutputs. TheHC132Acanbeusedtoenhancenoiseimmunityortosquareup slowlychangingwaveforms. Features •OutputDri | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-spee | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
开关管 （S）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
450V
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BUV47(A),BUW12(A),2SC3637,
- 最大耗散功率：
80W
- 放大倍数：
- 图片代号：
B-62
- vtest：
450
- htest：
999900
- atest：
8
- wtest：
80
详细参数
- 型号：
BUW132H
- 制造商：
ISC
- 制造商全称：
Inchange Semiconductor Company Limited
- 功能描述：
isc Silicon NPN Power Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TO-3PN |
10000 |
全新 |
询价 | ||||
PHI |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
PHILIPS/飞利浦 |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
询价 | ||
PHILIPS/飞利浦 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
询价 | ||
PHILIPS/飞利浦 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
isc |
2024 |
TO-3PN |
5000 |
国产品牌isc,可替代原装 |
询价 | ||
PHILIPS/飞利浦 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
PHI |
24+ |
TO-3P |
35400 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
