isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments.

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ISC

无锡固电

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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SEME-LAB

Seme LAB

NPN Silicon Low Frequency High Power Switching Transistor

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Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

TT Electronics