SITCHMODE Series NPN Silicon Power Transistor

This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 10 A • Low VCE(sat), VCE(sat) max = 1.0 V at IC = 10 A • Very Fast Switching Times: TF max = 0.35 s at IC = 20 A • Pb−Free Package is Avail

文件：137.77 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A • High Switching Speed • High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS • Designed for high current, high speed, high power applications.

文件：80.9 Kbytes 页数：2 Pages

ISC

无锡固电

40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS

. . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A • Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A • Very fast switching times: TF max. = 0.35 µs at IC = 20 A

文件：137.77 Kbytes 页数：4 Pages

Motorola

摩托罗拉

NPN Silicon Low Frequency High Power Switching Transistor

文件：57.17 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件：10.97 Kbytes 页数：1 Pages

SEME-LAB

SWITCHMODE Series NPN Silicon Power Transistor

文件：70.52 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Series NPN Silicon Power Transistor

文件：70.52 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Series NPN Silicon Power Transistor

文件：70.52 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

250W NPN High Power BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS

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