isc Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

文件：83.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

文件：185.62 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • High Switching Speed • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS • Designed for use in very fast switching applications in inductive circuits.

文件：194.17 Kbytes 页数：2 Pages

ISC

无锡固电

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

文件：150.99 Kbytes 页数：3 Pages

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

文件：87.15 Kbytes 页数：12 Pages

NEC

瑞萨

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

文件：52.18 Kbytes 页数：8 Pages

NEC

瑞萨