HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The devices are

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：74.17 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：234.61 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：245.69 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体