NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

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POINN

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

文件：873.25 Kbytes 页数：6 Pages

TRSYS

Transys Electronics

NPN SILICON POWER TRANSISTOR

文件：126.62 Kbytes 页数：6 Pages

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W\n● hFE 6 to 22 at VCE = 1 V, IC = 2 A\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

Power Innovations

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W\n● hFE 6 to 22 at VCE = 1 V, IC = 2 A\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

Bourns

伯恩斯

NPN SILICON POWER TRANSISTOR

TRANSYS