BUL128D-B数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

特性 Features

• INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
• VERY HIGH SWITCHING SPEED
• STMicroelectronics PREFERRED SALES TYPE
• HIGH VOLTAGE CAPABILITY
• NPN TRANSISTOR
• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
• LOW SPREAD OF DYNAMIC PARAMETERS

简介

BUL128D-B属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BUL128D-B晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。