N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Lo

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NEXPERIA

安世

N-channel TrenchMOS logic level FET

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恩XP

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • Low conduction losses due to low on-state resistance\n• Q101 compliant\n• Suitable for logic level gate drive sources\n• Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世

SOT-669

Nexperia(安世)

上传：深圳市宝芯创电子有限公司

SOT669

NEXPERIA/安世

上传：深圳深宇韬电子科技有限公司