丝印：95260RA；Package：LFPAK56D；Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Ful

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丝印：95260E；Package：LFPAK56D；Dual N-channel 60 V, 55 m廓 logic level MOSFET

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Dual N-channel 60 V, 55 m logic level MOSFET

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PHI

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Dual N-channel 60 V, 55 mΩ logic level MOSFET

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. • Dual MOSFET\n• AEC-Q101 compliant\n• Repetitive avalanche rated\n• Suitable for thermally demanding environments due to 175 °C rating\n• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C;

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Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. • Fully automotive qualified to AEC-Q101 at 175 °C\n• Repetitive Avalanche rated to 30 °C Tj rise:• Tested to 1 Bn avalanche events\n\n• LFPAK copper clip package technology:• High robustness and reliability\n• Gull wing leads for high manufacturability and AOI;

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