N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits • Low conduct

文件：108.71 Kbytes 页数：13 Pages

恩XP

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.08992 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：915055A；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：749.27 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 150 °C rated ■ Logic level compatible. Applications ■ Automotive and general p

文件：291.45 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

文件：304.37 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • Low conduction losses due to low on-state resistance\n• Q101 compliant\n• Suitable for logic level gate drive sources;

Nexperia

安世