TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended fo

文件：69.54 Kbytes 页数：8 Pages

PHI

PHI

TrenchMOS transistor standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications

文件：71.8 Kbytes 页数：9 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：333.05 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

文件：1.32323 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

文件：839.64 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

文件：226 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • AEC Q101 compliant\n• Low conduction losses due to low on-state resistance;

Nexperia

安世

MOSFET N-CH 55V 34A D2PAK

恩XP