TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general pu

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PHI

PHI

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：333.15 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS™ logic level FET

1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. 2. Features n TrenchMOS™ technology n Q101 compliant n 175 °C rated n Logic level compatible. 3. Applications n Automotive and

文件：403.33 Kbytes 页数：11 Pages

NEXPERIA

安世

BUK9508-55A - N-channel TrenchMOS logic level FET

·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for logic level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世