isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

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ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Lo

文件：807.31 Kbytes 页数：14 Pages

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N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 50A RDS(ON)

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Bychip

百域芯

TrenchMOS logic level FET

文件：294.29 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

文件：203.33 Kbytes 页数：14 Pages

PHI

PHI

BUK9219-55A - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for logic level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

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