isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 55V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

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ISC

无锡固电

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  A

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NEXPERIA

安世

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Features ■ Very low on-state resistance ■ Q101 compliant ■ 185 °C rated ■ Logic level compatible. Applications ■ Automotive syste

文件：98.79 Kbytes 页数：12 Pages

PHI

PHI

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

文件：1.96642 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-channel TrenchMOS logic level FET

文件：185.91 Kbytes 页数：13 Pages

PHI

PHI

BUK9212-55B - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·AEC Q101 compliant\n·Low conduction losses due to low on-state resistance\n·Suitable for logic level gate drive sources\n·Suitable for thermally demanding environments due to 185 °C rating;

Nexperia

安世