Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for automotive ignition applications, and has integral zener diodes providing active collector voltage clamping and ESD pr

文件：85.5 Kbytes 页数：8 Pages

PHI

PHI

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

文件：92.53 Kbytes 页数：8 Pages

PHI

PHI

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

GENERAL DESCRIPTION\nProtected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope\nsuitable for surface mount applications. It is intended for automotive ignition applications, and has integral zener diodes providing active collector voltage clamping and ESD protecti

恩XP

The Product Data Amendment series of documents

文件：106.75 Kbytes 页数：1 Pages

CMLMICRO

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：148.36 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Continuous Hinge Door with Quarter Turn

Application -Designed to enclose electrical and/or electronic equipment and protect against harsh,industrial environments. -For use as instrument enclosures, electric, hydraulic or pneumatic control housings,electrical junction boxes or terminal wiring enclosures. -Impressive styling features m

文件：246.27 Kbytes 页数：2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司