丝印：75960E；Package：LFPAK56；N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

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NEXPERIA

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N-channel 60 V, 59 m廓 standard level MOSFET in LFPAK56

文件：321.46 Kbytes 页数：13 Pages

恩XP

N-channel 60 V, 59 m廓 standard level MOSFET in LFPAK56

文件：321.18 Kbytes 页数：13 Pages

PHI

PHI

N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. • Q101 compliant\n• Repetitive avalanche rated\n• Suitable for thermally demanding environments due to 175 °C rating\n• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C;

Nexperia

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包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：DIODE ARRAY SCHOTTKY

Nexperia USA Inc.