BUK7Y102-100B数据表ic资料批发供应安世-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BUK7Y102-100B	文件：938.39 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica 文件：938.39 Kbytes 页数：14 Pages	NEXPERIA 安世	NEXPERIA
BUK7Y102-100B	文件：358.84 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 文件：358.84 Kbytes 页数：14 Pages	恩XP	恩XP
BUK7Y102-100B_15	文件：358.84 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 文件：358.84 Kbytes 页数：14 Pages	PHI PHI	PHI
BUK7Y102-100B	文件：300 bytes Page：1 Pages	N-channel TrenchMOS standard level FET Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • AEC-Q101 compliant\n• Suitable for standard level gate drive sources\n• Suitable for thermally demanding environments due to 175 °C rating;	Nexperia 安世	Nexperia

更多BUK7Y102-100B供应商更新时间2026-1-28 18:00:00