N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using 恩XP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical app

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NEXPERIA

安世

N-channel TrenchMOS standard level FET

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恩XP

N-channel TrenchMOS standard level FET

文件：211.16 Kbytes 页数：14 Pages

PHI

PHI

BUK7Y07-30B - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using 恩XP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive c ·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for standard level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

安世